Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

Autor: Lee, S.W, Chen, L.J, Chen, P.S, Tsai, M.-J, Liu, C.W, Chen, W.Y, Hsu, T.M
Zdroj: In Applied Surface Science 2004 224(1):152-155
Databáze: ScienceDirect
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