Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels
| Autor: | Buniatyan, V.V., Gasparyan, F.V., Aroutiounian, V.V. *, Soukiassian, P. |
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| Zdroj: | In Applied Surface Science 2001 184(1):466-470 |
| Databáze: | ScienceDirect |
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