Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates
| Autor: | Lebedev, A.A. *, Strel’chuk, A.M., Davydov, D.V., Savkina, N.S., Tregubova, A.S., Kuznetsov, A.N., Solov’ev, V.A., Poletaev, N.K. |
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| Zdroj: | In Applied Surface Science 2001 184(1):419-424 |
| Databáze: | ScienceDirect |
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