F2 laser etching of GaN

Autor: Akane, T. *, Sugioka, K., Nomura, S., Hammura, K., Aoki, N., Toyoda, K., Aoyagi, Y., Midorikawa, K.
Zdroj: In Applied Surface Science 15 December 2000 168(1-4):335-339
Databáze: ScienceDirect