Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs( n11)A ( n≤4) substrates

Autor: Feng, J.M *, Asai, K, Narukawa, Y, Kawakami, Y, Fujita, S, Ohachi, T
Zdroj: In Applied Surface Science 2000 159:532-539
Databáze: ScienceDirect