Orientation effect on intersubband tunneling of quantum wells grown on high-index GaAs( n11)A ( n≤4) substrates
Autor: | Feng, J.M *, Asai, K, Narukawa, Y, Kawakami, Y, Fujita, S, Ohachi, T |
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Zdroj: | In Applied Surface Science 2000 159:532-539 |
Databáze: | ScienceDirect |
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