Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy
| Autor: | Yamaguchi, Shigeo *, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu |
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| Zdroj: | In Applied Surface Science 2000 159:414-420 |
| Databáze: | ScienceDirect |
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