Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy
| Autor: | Pintilie, I. *, Tivarus, C., Botila, T., Petre, D., Pintilie, L. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, A 2000 439(2):221-227 |
| Databáze: | ScienceDirect |
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