Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents
| Autor: | Pintilie, I. *, Petre, D., Pintilie, L., Tivarus, C., Petris, M., Botila, T. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, A 2000 439(2):303-309 |
| Databáze: | ScienceDirect |
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