JICG CMOS transistors for reduction of total ionizing dose and single event effects in a 130 nm bulk SiGe BiCMOS technology
| Autor: | Sorge, R., Schmidt, J., Wipf, Ch., Reimer, F., Teply, F., Korndörfer, F. |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, A 21 January 2021 987 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect