Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
| Autor: | Lange, J., Becker, J., Fretwurst, E., Klanner, R., Lindström, G. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, A 1 October 2010 622(1):49-58 |
| Databáze: | ScienceDirect |
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