Epitaxial structures based on compensated GaAs for γ- and X-ray detectors
| Autor: | Budnitsky, D.L., Germogenov, V.P. *, Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, A 2001 466(1):33-38 |
| Databáze: | ScienceDirect |
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