Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma
| Autor: | Deenapanray, P.N.K *, Auret, F.D, Myburg, G |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 1999 148(1):300-305 |
| Databáze: | ScienceDirect |
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