Precipitation, ripening and chemical effects during annealing of Ge + implanted SiO 2 layers
| Autor: | Heinig, K.H, Schmidt, B *, Markwitz, A, Grötzschel, R, Strobel, M, Oswald, S |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 1999 148(1):969-974 |
| Databáze: | ScienceDirect |
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