Effect of oxygen on ion-beam induced synthesis of SiC in silicon

Autor: Artamonov, V.V., Valakh, M.Ya., Klyui, N.I. *, Melnik, V.P., Romanyuk, A.B., Romanyuk, B.N., Yuhimchuk, V.A.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 1999 147(1):256-260
Databáze: ScienceDirect