Si/Ge x Si 1−x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width
| Autor: | Lombardo, S. *, Spinella, C., Campisano, S.U., Pinto, A., Ward, P. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 1999 147(1):56-61 |
| Databáze: | ScienceDirect |
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