Electrically active defects in BF 2+ implanted and germanium preamorphized silicon
| Autor: | Boussaid, Farid, Benzohra, Mohammed, Olivie, François, Alquier, Daniel, Martinez, Augustin |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 1998 134(2):195-201 |
| Databáze: | ScienceDirect |
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