Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Autor: Nikolskaya, A.A., Korolev, D.S., Trushin, V.N., Yunin, P.A., Mikhaylov, A.N., Belov, A.I., Konakov, A.A., Okulich, E.V., Pavlov, D.A., Tetelbaum, D.I.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B April 2023 537:60-64
Databáze: ScienceDirect