GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers
| Autor: | Aggar, L., Bradai, D., Bourezg, Y.I., Abdesselam, M., Chami, A.C., Mocuta, C., Thiaudiere, D., Speisser, C., Muller, D., Bouillet, C., Le Normand, F. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 December 2020 485:57-67 |
| Databáze: | ScienceDirect |
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