RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs
Autor: | Coelho-Júnior, H., Maltez, R.L. |
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Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 April 2019 445:1-7 |
Databáze: | ScienceDirect |
Externí odkaz: |
Autor: | Coelho-Júnior, H., Maltez, R.L. |
---|---|
Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 April 2019 445:1-7 |
Databáze: | ScienceDirect |
Externí odkaz: |