RBS/C and TEM characterization of GaN nanolayer obtained by IBS on (001) GaAs
| Autor: | Coelho-Júnior, H., Maltez, R.L. |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 April 2019 445:1-7 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Coelho-Júnior, H., Maltez, R.L. |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 April 2019 445:1-7 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect