Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Autor: Pągowska, K.D., Kozubal, M., Taube, A., Guziewicz, M., Gołaszewska-Malec, K., Kruszka, R., Jakieła, R., Piotrowska, A.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 1 April 2019 444:74-79
Databáze: ScienceDirect
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