Analysis of defect structure in GaN epilayers doped with implanted Si+ by RBS/c method
| Autor: | Pągowska, K.D., Kozubal, M., Taube, A., Trajnerowicz, A., Kruszka, R., Gołaszewska-Malec, K., Dynowska, E., Jakieła, R., Barcz, A. |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 1 July 2019 450:248-251 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect