The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions
| Autor: | Ieshkin, A.E., Kireev, D.S., Ermakov, Yu.A., Trifonov, A.S., Presnov, D.E., Garshev, A.V., Anufriev, Yu.V., Prokhorova, I.G., Krupenin, V.A., Chernysh, V.S. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 April 2018 421:27-31 |
| Databáze: | ScienceDirect |
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