Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC

Autor: Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E., Auret, F.D.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 15 October 2017 409:41-45
Databáze: ScienceDirect