Influence of Si ion implantation on structure and morphology of g-C3N4

Autor: Varalakshmi, B., Sreenivasulu, K.V., Asokan, K., Srikanth, V.V.S.S.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 15 July 2016 379:167-170
Databáze: ScienceDirect