Comparison of silicon and 4H silicon carbide patterning using focused ion beams
| Autor: | Veerapandian, S.K.P., Beuer, S., Rumler, M., Stumpf, F., Thomas, K., Pillatsch, L., Michler, J., Frey, L., Rommel, M. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 December 2015 365 Part A:44-49 |
| Databáze: | ScienceDirect |
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