Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

Autor: Fekecs, André, Chicoine, Martin, Ilahi, Bouraoui, SpringThorpe, Anthony J., Schiettekatte, François, Morris, Denis, Charette, Paul G., Arès, Richard
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 15 September 2015 359:99-106
Databáze: ScienceDirect