Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

Autor: Zhang, R., Li, H., Zhang, Z.D., Wang, Z.S., Zhou, S.Y., Wang, Z., Li, T.C., Liu, J.R., Fu, D.J.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 1 August 2015 356-357:99-102
Databáze: ScienceDirect