Near-surface recrystallization of the amorphous implanted layer of ion implanted 6H-SiC

Autor: Kuhudzai, R.J., van der Berg, N.G., Malherbe, J.B., Hlatshwayo, T.T., Theron, C.C., Buys, A.V., Botha, A.J., Wendler, E., Wesch, W.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 1 August 2014 332:251-256
Databáze: ScienceDirect