Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
| Autor: | Darras, F.-X., Cherkashin, N., Cristiano, F., Scheid, E., Kononchuk, O., Capello, L., Claverie, A. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 15 May 2014 327:29-32 |
| Databáze: | ScienceDirect |
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