Creation of Si nanocrystals from SiO2/Si by He and H ion implantation

Autor: Zhang, X.D., Liu, C.L., Li, M.K., Gao, Y.J., Zhang, D.C.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 1 April 2012 276:25-29
Databáze: ScienceDirect