Damage accumulation and annealing behavior in high fluence implanted MgZnO

Autor: Azarov, A.Yu., Hallén, A., Svensson, B.G., Du, X.L., Kuznetsov, A.Yu.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 2012 272:426-429
Databáze: ScienceDirect