Solid-state microwave annealing of ion-implanted 4H–SiC

Autor: Sundaresan, Siddarth G., Tian, Yong-lai, Ridgway, Mark C., Mahadik, Nadeemullah A., Qadri, Syed B., Rao, Mulpuri V.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B August 2007 261(1-2):616-619
Databáze: ScienceDirect