Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
| Autor: | Yanagisawa, J., Matsumoto, H., Fukuyama, T., Shiraishi, Y., Yodo, T., Akasaka, Y. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B April 2007 257(1-2):348-351 |
| Databáze: | ScienceDirect |
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