TEM study of PtSi contact layers for low Schottky barrier MOSFETs
Autor: | Łaszcz, A., Kątcki, J., Ratajczak, J., Czerwinski, A., Breil, N., Larrieu, G., Dubois, E. |
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Zdroj: | In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):274-277 |
Databáze: | ScienceDirect |
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