TEM study of PtSi contact layers for low Schottky barrier MOSFETs

Autor: Łaszcz, A., Kątcki, J., Ratajczak, J., Czerwinski, A., Breil, N., Larrieu, G., Dubois, E.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):274-277
Databáze: ScienceDirect