A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealing
| Autor: | Hassan, Moustafa M., Ghannam, Moustafa Y., Poortmans, Jef, Mertens, Robert |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B December 2006 253(1-2):269-273 |
| Databáze: | ScienceDirect |
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