Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors
| Autor: | Hjalmarson, H.P., Pease, R.L., Hembree, C.E., Van Ginhoven, R.M., Schultz, P.A. |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B September 2006 250(1-2):269-273 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect