Effect of pre-implanted oxygen in Si on the retention of implanted He

Autor: Manuaba, A., Pászti, F., Ramos, A.R., Khánh, N.Q., Pécz, B., Zolnai, Z., Tunyogi, A., Szilágyi, E.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B August 2006 249(1-2):150-152
Databáze: ScienceDirect