Effect of pre-implanted oxygen in Si on the retention of implanted He
Autor: | Manuaba, A., Pászti, F., Ramos, A.R., Khánh, N.Q., Pécz, B., Zolnai, Z., Tunyogi, A., Szilágyi, E. |
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Zdroj: | In Nuclear Inst. and Methods in Physics Research, B August 2006 249(1-2):150-152 |
Databáze: | ScienceDirect |
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