Microstructural change with annealing of SiC irradiated with Ne at 573–673 K
| Autor: | Aihara, J., Hojou, K., Furuno, S., Shimura, K., Hojo, T., Sawa, K., Yamamoto, H., Motohashi, Y. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B January 2006 242(1-2):441-444 |
| Databáze: | ScienceDirect |
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