90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants
| Autor: | Felch, S.B., Foad, M.A., Olsen, C., Nouri, F., Matsunaga, Y., Natsuaki, N. |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B August 2005 237(1-2):53-57 |
| Databáze: | ScienceDirect |
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