Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

Autor: Fink, D., Petrov, A.V., Hoppe, K., Fahrner, W.R., Papaleo, R.M., Berdinsky, A.S., Chandra, A., Chemseddine, A., Zrineh, A., Biswas, A., Faupel, F., Chadderton, L.T.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 2004 218:355-361
Databáze: ScienceDirect