Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures
Autor: | Fink, D., Petrov, A.V., Hoppe, K., Fahrner, W.R., Papaleo, R.M., Berdinsky, A.S., Chandra, A., Chemseddine, A., Zrineh, A., Biswas, A., Faupel, F., Chadderton, L.T. |
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Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 2004 218:355-361 |
Databáze: | ScienceDirect |
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