Ion beam characterization and engineering of strain in semiconductor multi-layers

Autor: Nageswara Rao, S.V.S, Pathak, Anand P, Siddiqui, Azher M, Avasthi, D.K, Muntele, Claudiu, Ila, Daryush, Dev, B.N, Muralidharan, R, Eichhorn, F, Groetzschel, R, Turos, A
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 2003 212:442-450
Databáze: ScienceDirect