Ion beam characterization and engineering of strain in semiconductor multi-layers
Autor: | Nageswara Rao, S.V.S, Pathak, Anand P, Siddiqui, Azher M, Avasthi, D.K, Muntele, Claudiu, Ila, Daryush, Dev, B.N, Muralidharan, R, Eichhorn, F, Groetzschel, R, Turos, A |
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Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 2003 212:442-450 |
Databáze: | ScienceDirect |
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