Cell structure and saturation effects of radiation-hardened power VDMOSFET devices under extreme dose X-ray irradiation
| Autor: | Wang, Zhaoye a, Park, Mun-Soo a, Gillberg, James E b, Wie, Chu R a, ∗ |
|---|---|
| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 2003 211(2):251-258 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect