Charge states distribution of 3350 keV He ions channeled in silicon
| Autor: | Bentini, G.G, Albertazzi, E, Bianconi, M, Lotti, R, Lulli, G |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 2002 193(1):113-117 |
| Databáze: | ScienceDirect |
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