Heteroepitaxial SiC films grown in Si by CH 4 plasma immersion ion implantation: Conditions and mechanisms of their formation
| Autor: | Volz, K *, Klatt, Ch, Ensinger, W |
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| Zdroj: | In Nuclear Inst. and Methods in Physics Research, B 2001 175:569-574 |
| Databáze: | ScienceDirect |
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