Theoretical and experimental investigations of defect evolution in silicon carbide during N + and Al + ion implantation taking into account internal stress fields

Autor: Rybin, P.V., Kulikov, D.V., Trushin, Yu.V., Yankov, R.A., Voelskow, M., Scharmann, F., Pezoldt, J. *
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 2001 178(1):269-274
Databáze: ScienceDirect