The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO 2 with Si nanoinclusions

Autor: Tetelbaum, D.I. *, Trushin, S.A., Burdov, V.A., Golovanov, A.I., Revin, D.G., Gaponova, D.M.
Zdroj: In Nuclear Inst. and Methods in Physics Research, B 2001 174(1):123-129
Databáze: ScienceDirect