Anomalous behavior of the pulse transfer characteristic of a selectively doped Al xGa 1− xAs/GaAs heterostructure containing deep traps

Autor: Prokhorov, E *, González-Hernández, J, Gorev, N.B, Kodzhespirova, I.F, Kovalenko, Yu.A
Zdroj: In Microelectronic Engineering 2000 51:165-170
Databáze: ScienceDirect