Chemical studies of CVD Cu deposited on Ta and TaN barriers under various process conditions
| Autor: | Voss, Steve *, Gandikota, Srinivas, Chen, Liang-Yuh, Tao, Rong, Cong, Dennis, Duboust, Alain, Yoshida, Naomi, Ramaswami, Sesh |
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| Zdroj: | In Microelectronic Engineering 2000 50(1):501-508 |
| Databáze: | ScienceDirect |
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