A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
| Autor: | Mahapatra, S., Rao, V.Ramgopal, Parikh, C.D., Vasi, J., Cheng, B., Woo, J.C.S. |
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| Zdroj: | In Microelectronic Engineering 1999 48(1):193-196 |
| Databáze: | ScienceDirect |
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