The effects of Ge content in poly-Si 1− xGe x gate material on the tunneling barrier in PMOS devices

Autor: Shanware, A, Massoud, H.Z, Acker, A, Li, V.Z.-Q, Mirabedini, M.R, Henson, K, Hauser, J.R, Wortman, J.J
Zdroj: In Microelectronic Engineering 1999 48(1):39-42
Databáze: ScienceDirect