The effects of Ge content in poly-Si 1− xGe x gate material on the tunneling barrier in PMOS devices
Autor: | Shanware, A, Massoud, H.Z, Acker, A, Li, V.Z.-Q, Mirabedini, M.R, Henson, K, Hauser, J.R, Wortman, J.J |
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Zdroj: | In Microelectronic Engineering 1999 48(1):39-42 |
Databáze: | ScienceDirect |
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